安徽工程大学电气工程学院;安徽省车载显示集成系统安徽省工程研究中心;
光量子忆阻器可通过反射率可调的分束器实现，其中反射率依据出射光束的测量反馈进行动态调整。先前报道的光量子忆阻器展示出了捏滞曲线如何随积分区间的变化而演变，但其捏滞曲线的叶片面积并不受输入信号频率的影响。鉴于此，提出了一种利用移相器中的相位偏移作为状态变量构建的新型光量子忆阻器。新的光量子忆阻器受输入信号的频率影响，展现出与经典忆阻器相似的特性，其捏滞曲线随输入频率的增加而趋向于一条直线。对光量子忆阻器的类脑突触特性进行深入分析验证了其在模拟人工突触功能方面的可行性与潜力。基于条件反射理论，设计了一种能够实现全功能巴甫洛夫联想记忆结构的方案，并通过详尽的模拟实验对该结构的正确性与有效性进行了验证。
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基本信息:
DOI：
中图分类号:TN60
引用信息:
[1]李威,代广珍.相移光量子忆阻器及突触特性研究[J].山东师范大学学报(自然科学版),2024,39(04):331-338.
基金信息:
国家自然科学基金资助项目(62174001); 安徽省教育厅自然科学基金重点资助项目(2023AH050922)